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A 6T SRAM Based Two-Dimensional Configurable Challenge-Response PUF for Portable Devices.

Authors :
Lu, Lu
Yoo, Taegeun
Kim, Tony Tae-Hyoung
Source :
IEEE Transactions on Circuits & Systems. Part I: Regular Papers. Jun2022, Vol. 69 Issue 6, p2542-2552. 11p.
Publication Year :
2022

Abstract

This work proposes a 2-dimensional programable SRAM-based PUF. The selection of challenge groups, orders, and sequence lengths dominates the responses with challenge-response pairs (CRPs) by order of rows $^{\mathrm {(sequence~\textrm {}length- 1)}} \times $ columns $^{\mathrm {(sequence~\textrm {}length - 1)}}$. The PUF bit cell has split word-lines with vertical and horizontal connections, the bit-lines are placed orthogonally to generate one-bit data with four cells, the entropy source is enriched to 24 transistors. The proposed PUF supports multiple data maps from a single chip. A test chip was fabricated in 65 nm CMOS technology. Under 0.8V and 20 °C (nominal point), the bit error rate reaches 3%. In a single chip, the hamming distance achieves 42.49% within the same group and different orders of challenges, and 47.32% within the different groups of challenges (when the sequence length is 5). The measured inter-hamming distance between chips is improved to 49.47%. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
15498328
Volume :
69
Issue :
6
Database :
Academic Search Index
Journal :
IEEE Transactions on Circuits & Systems. Part I: Regular Papers
Publication Type :
Periodical
Accession number :
157191483
Full Text :
https://doi.org/10.1109/TCSI.2022.3156983