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Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability.
- Source :
-
Microelectronics Reliability . Jul2022, Vol. 134, pN.PAG-N.PAG. 1p. - Publication Year :
- 2022
-
Abstract
- Development of integration of different components with GaN-based technologies has been gaining traction in recently. Among these, diodes play important roles in GaN power ICs. For this work, a fabrication approach for integrating a Schottky barrier diode (SBD) with a p-GaN enhancement (E-mode) for 200 V switching application is demonstrated. The integrated SBD with 30-mm width shows a low forward voltage (V f) with more than 10A and 6A at V ac = 3 V at 25 °C and 150 °C, respectively. Additionally, the devices show a stable ON-resistance (R ON) (<20% increase) up to 200 V at 25 °C/150 °C under pulsed IV characterization and OFF-state stress, pointing out the robust stability for integrated GET-SBDs on a power p-GaN HEMT platform. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 134
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 157254096
- Full Text :
- https://doi.org/10.1016/j.microrel.2022.114568