Memristive technologies for data storage, computation, encryption, and radio-frequency communication.

The article reports that memristive devices exhibit an electrical resistance that can be adjusted to two or more nonvolatile levels by applying electrical stresses. Topics include considered that the core of the advanced memristive devices is a metal/insulator/metal nanocell made of phase-change, metaloxide, magnetic, or ferroelectric materials, which is placed in series with other circuit elements to enhance their performance in array configurations.