Back to Search
Start Over
Comparison of 2-D MoS 2 and Si Ferroelectric FET Nonvolatile Memories Considering the Trapped-Charge-Induced Variability.
- Source :
-
IEEE Transactions on Electron Devices . May2022, Vol. 69 Issue 5, p2738-2740. 3p. - Publication Year :
- 2022
-
Abstract
- This brief investigates scaled 2-D MoS2 ferroelectric field-effect transistor (FeFET) nonvolatile memories (NVMs) considering the trapped-charge-induced variability with the aid of Technology Computer Aided Design (TCAD) atomistic simulations. Our study indicates that, compared with the Si channel, the monolayer MoS2 channel with larger electron affinity and bandgap energy can result in an FeFET NVM with larger memory window (MW). Moreover, due to its lower channel permittivity and channel thickness, the 2-D MoS2 FeFET possesses a superior immunity to trapped-charge-induced variability, and the gap in MW between MoS2 and Si FeFETs enlarges under the presence of trapped charges. Besides, due to its atomically thin channel thickness and superior electrostatic integrity, the scaled 2-D MoS2 FeFET possesses a remarkably better read margin than the Si counterpart. Our study may provide insights for future scaling of FeFET NVMs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 69
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 157582632
- Full Text :
- https://doi.org/10.1109/TED.2022.3159613