Annealing effect on Dy: (GeSe2)80(In2Se3)20 thin films - Oscillator, dielectric, absorption and nonlinear parameters.

Rare earth doping increases the emission range and is an attractive candidate for sensing applications because of its good infrared properties. Here (Dy) doped (GeSe 2) 80 (In 2 Se 3) 20 thin films have been deposited via thermal evaporation and then annealed at different temperatures in order to investigate its effect on various parameters. Refractive index, calculated by drawing lower and upper envelopes, has been used to calculate the Wemple DiDomenico and Sellmeier oscillator parameters. The calculation of dielectric parameters shows a decrease in the loss of electromagnetic energy. Optical energy bandgap (E g) values increase from 1.86 eV to 2.10 eV. To a good approximation, E 0 and E g follow Tanaka's relation: E 0 / E g ≈ 2. The electric modulus and complex impedance have been interpreted to give information about the relaxation phenomenon in the films. The calculated nonlinear refractive index values vary from 5.74 × 1011 esu to 3.45 × 1011 esu which are far higher than the silica glasses. • Dy doped (GeSe 2) 80 (In 2 Se 3) 20 thin film is prepared and annealed at different temperatures to examine the optical parameters. • Themo induced effect has shown a change in the optical bandgap from 1.86 eV to 2.10 eV. • Linear and nonlinear optical properties are evaluated. • The static Linear refractive index is noticed to decrease from 2.57 to 2.42 with annealing temperature. • Dispersion energy decreases from 20.94eV to 19.38eV with annealing temperature. [ABSTRACT FROM AUTHOR]