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Cite

Reduced Schottky barrier height at metal/CVD-grown MoTe2 interface.

MLA

Zhang, Pengzhen, et al. “Reduced Schottky Barrier Height at Metal/CVD-Grown MoTe2 Interface.” Applied Physics Letters, vol. 120, no. 26, June 2022, pp. 1–5. EBSCOhost, https://doi.org/10.1063/5.0097423.



APA

Zhang, P., Di, B., Lei, W., Wen, X., Zhang, Y., Li, L., Yang, L., Chang, H., & Zhang, W. (2022). Reduced Schottky barrier height at metal/CVD-grown MoTe2 interface. Applied Physics Letters, 120(26), 1–5. https://doi.org/10.1063/5.0097423



Chicago

Zhang, Pengzhen, Boyuan Di, Wenyu Lei, Xiaokun Wen, Yuhui Zhang, Liufan Li, Li Yang, Haixin Chang, and Wenfeng Zhang. 2022. “Reduced Schottky Barrier Height at Metal/CVD-Grown MoTe2 Interface.” Applied Physics Letters 120 (26): 1–5. doi:10.1063/5.0097423.

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