Densely packed Ga2O3 nanostructured film via pH-controlled crystal growth and memristive properties.

Gallium Oxide (Ga 2 O 3) nanostructured film is deposited via a single step aqueous method by controlling the pH value of precursor solution. The uniformity, density and crystallite size varies when the pH of precursor solution changes from pH 6 to pH 9. The as-deposited nanostructured film is present in hydroxide crystalline phase which gets converted to a mixed phase ('α' and 'β') when heat treated at 600 ​°C. The densely packed Ga 2 O 3 nanostructured film (at pH 8) shows better electrical conductivity and stable current density of 10−8 A/cm2. The memristive measurement for densely packed nanostructured film results in R OFF /R ON ratio in order of 102, whereas the V set and V reset values are observed to be 2.7V and −3.1V respectively. This single step process is suitable for deposition of good quality, large crystallite, densely packed nanostructured Ga 2 O 3 films that can be utilized in various electronic and optoelectronic applications. Ga 2 O 3 nanostructured thin film for resistor based memory device (Memristors). [Display omitted] • Facile beaker chemistry synthesis at low temperature for deposition of Ga 2 O 3 nanostructure thin films. • Variations in Ga 2 O 3 nanostructured thin films due to change in pH of initial precursor solution. • Densely packed Ga 2 O 3 nanostructured thin films at pH 8 is obtained with enlarged crystals. • Ga 2 O 3 nanostructured films based memristors device showed resistance ratio of 102 with set and reset voltages at 2.7V and −3.1V respectively. [ABSTRACT FROM AUTHOR]