Cite
Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs.
MLA
Toguchi, Shintaro, et al. “Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs.” IEEE Transactions on Nuclear Science, vol. 69, no. 7, July 2022, pp. 1420–27. EBSCOhost, https://doi.org/10.1109/TNS.2021.3138020.
APA
Toguchi, S., Zhang, E. X., Rony, M. W., Luo, X., Fleetwood, D. M., Schrimpf, R. D., Moreau, S., Cheramy, S., Batude, P., Brunet, L., Andrieu, F., & Alles, M. L. (2022). Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs. IEEE Transactions on Nuclear Science, 69(7), 1420–1427. https://doi.org/10.1109/TNS.2021.3138020
Chicago
Toguchi, Shintaro, En Xia Zhang, Mohammed W. Rony, Xuyi Luo, Daniel M. Fleetwood, Ronald D. Schrimpf, Stephane Moreau, et al. 2022. “Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs.” IEEE Transactions on Nuclear Science 69 (7): 1420–27. doi:10.1109/TNS.2021.3138020.