Cite
Improved performance of near UV-blue n-ZnO/p-GaN heterostructure LED with an AlN electron blocking layer.
MLA
Ünal, Derya, et al. “Improved Performance of near UV-Blue n-ZnO/p-GaN Heterostructure LED with an AlN Electron Blocking Layer.” Microelectronic Engineering, vol. 262, June 2022, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.mee.2022.111830.
APA
Ünal, D., Varol, S. F., Brault, J., Chenot, S., Al Khalfioui, M., & Merdan, Z. (2022). Improved performance of near UV-blue n-ZnO/p-GaN heterostructure LED with an AlN electron blocking layer. Microelectronic Engineering, 262, N.PAG. https://doi.org/10.1016/j.mee.2022.111830
Chicago
Ünal, Derya, Songül Fiat Varol, Julien Brault, Sébastien Chenot, Mohamed Al Khalfioui, and Ziya Merdan. 2022. “Improved Performance of near UV-Blue n-ZnO/p-GaN Heterostructure LED with an AlN Electron Blocking Layer.” Microelectronic Engineering 262 (June): N.PAG. doi:10.1016/j.mee.2022.111830.