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Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure.
- Source :
-
Nanotechnology . 10/15/2022, Vol. 33 Issue 42, p1-7. 7p. - Publication Year :
- 2022
-
Abstract
- Combining novel two-dimensional materials with traditional semiconductors to form heterostructures for photoelectric detection have attracted great attention due to their excellent photoelectric properties. In this study, we reported the formation of a heterostructure comprising of tin telluride (SnTe) and germanium (Ge) by a simple and efficient one-step magnetron sputtering technique. A photodetector was fabricated by sputtering a nanofilm of SnTe on to a pre-masked n-Ge substrate. J â€" V measurements obtained from the SnTe/n-Ge photodetector demonstrated diode and photovoltaic characteristics in the visible to near-infrared (NIR) band (i.e. 400â€"2050 nm). Under NIR illumination at 850 nm with an optical power density of 13.81 mW cmâ'2, the SnTe/n-Ge photodetector exhibited a small open-circuit voltage of 0.05 V. It also attained a high responsivity (R) and detectivity (D *) of 617.34 mA Wâ'1 (at bias voltage of â'0.5 V) and 2.33 × 1011 cmHz1/2Wâ'1 (at zero bias), respectively. Therefore, SnTe nanofilm/n-Ge heterostructure is highly suitable for used as low-power broadband photodetector due to its excellent performances and simple device configuration. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 33
- Issue :
- 42
- Database :
- Academic Search Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 158427216
- Full Text :
- https://doi.org/10.1088/1361-6528/ac80cc