Cite
Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al 2 O 3 /Si 3 N 4 Gate Insulator Under Hot Switching.
MLA
Wu, Pei-Yu, et al. “Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al 2 O 3 /Si 3 N 4 Gate Insulator Under Hot Switching.” IEEE Transactions on Electron Devices, vol. 69, no. 8, Aug. 2022, pp. 4218–23. EBSCOhost, https://doi.org/10.1109/TED.2022.3184905.
APA
Wu, P.-Y., Tsai, X.-Y., Chang, T.-C., Yeh, Y.-H., Huang, W.-C., Chang, K.-C., Tsai, T.-M., & Huang, J.-W. (2022). Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al 2 O 3 /Si 3 N 4 Gate Insulator Under Hot Switching. IEEE Transactions on Electron Devices, 69(8), 4218–4223. https://doi.org/10.1109/TED.2022.3184905
Chicago
Wu, Pei-Yu, Xin-Ying Tsai, Ting-Chang Chang, Yu-Hsuan Yeh, Wei-Chen Huang, Kai-Chun Chang, Tsung-Ming Tsai, and Jen-Wei Huang. 2022. “Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al 2 O 3 /Si 3 N 4 Gate Insulator Under Hot Switching.” IEEE Transactions on Electron Devices 69 (8): 4218–23. doi:10.1109/TED.2022.3184905.