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Gate-free tunable 2D/2D heterojunction composed of MoTe2 and 2D electron gas at the surface of KTaO3.
- Source :
-
Applied Physics Letters . 8/15/2022, Vol. 121 Issue 7, p1-7. 7p. - Publication Year :
- 2022
-
Abstract
- The hybrid integration of oxide two-dimensional electron gases (2DEGs) and 2D layered transition-metal dichalcogenides is expected to exhibit diverse physical phenomena, which cannot appear in either material alone. Here, we demonstrate a gate-free tunable 2D/2D heterojunction composed of MoTe2 and 2DEG at the surface of KTaO3. The combination of metallic MoTe2 and n-type 2DEG together forms a Schottky diode with a large on/off current ratio of 104 at room temperature. Moreover, the MoTe2/2DEG diode exhibits largely tunable electrical transport characteristics without gate voltages. By applying bias voltages, the diode shows tunable transport properties ranging from insulating to excellent rectifying behaviors. The bias-voltage-dependent modulation dominantly originates from the tunable Schottky barrier width controlled by the carrier density of the 2DEG. Our results pave a way for the development of 2D nanoelectronic devices such as multi-bit memories and bias sensors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 121
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 158625207
- Full Text :
- https://doi.org/10.1063/5.0100028