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Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications.
- Source :
-
Applied Physics Letters . 8/15/2022, Vol. 121 Issue 7, p1-6. 6p. - Publication Year :
- 2022
-
Abstract
- In this work, a high linearity AlGaN/GaN HEMT integrated dual threshold coupling (DT) technology and Schottky–Ohmic drain (SOD) were fabricated and analyzed. Since the architecture of DT synthesized planar- and recess-HEMT periodically along the gate width, SOD alleviated the peak electric field (E-field) around the gate region and the peak transconductance (Gm-max) of 248 mS/mm with the associated transconductance plateau of ∼4.0 V at Vds = 28 V was obtained, which is evidently flatter than that of HEMT without the SOD structure. Attributed to the improved Gm linearity at high E-field, the DT-SOD HEMT exhibits the predicted linearity figure of merit of 5–13 dB when biased at class AB operation, which is ∼10 dB higher than that of DT-HEMT. Moreover, the fabricated device yields a nearly constant fT/fmax of 47/118 GHz over a wide gate voltage, and load-pull measurements at 30 GHz reveal that these devices deliver output power density (Pout) of 7.8 W/mm with the associated 1-dB compression point (P1dB) of 28.5 dBm at Vds = 28 V. The experimental results indicate that the employment of DT technology and SOD structure is an attractive approach to enhance the linearity at high E-field for millimeter wave devices. [ABSTRACT FROM AUTHOR]
- Subjects :
- *MILLIMETER wave devices
*GALLIUM nitride
*POWER density
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 121
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 158625221
- Full Text :
- https://doi.org/10.1063/5.0096542