Review: 3-ω Technique for Thermal Conductivity Measurement—Contemporary and Advancement in Its Methodology.

As the size of electronic devices is reducing the heat generation is increasing tremendously within the devices. Thermal management is an effective way to control the heat generation in the devices. One of the governing factors of the thermal management is thermal conductivity of the materials. Thermal conductivity varies abruptly as the material dimension shrinks and becomes concern when material dimension equals to an order of mean free path of thermal energy carriers. The state-of-art devices contains thin films and nanostructures having dimension varying from 100 µm to 10 nm, which is expected to decrease to a size of few layers of atoms in the near future. Thermal conductivity of the thin films and nanostructures measured using steady state and transient techniques. Among them, the 3- ω technique is a versatile method to find thermal conductivity of thin films, fluids, and gases quickly and efficiently. This article provides an elaborate review on the state-of-art 3- ω characterization technique and methodology, device morphology, advantages, and mathematical model for various device configurations along with its advancement for accurate thermal management in microelectronics, nanoelectronics and nanofluidics industry. Detailed description on effectiveness and limitations of various 3- ω device design is understood, and critical comments are presented. Importantly, this review will aid new graduate students and researchers in the field of thermal conductivity measurement. [ABSTRACT FROM AUTHOR]