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Improved thermal stability and power consumption performances of Ge1Sb9 phase change thin films via doping yttrium.
- Source :
-
CrystEngComm . 9/7/2022, p5958-5965. 8p. - Publication Year :
- 2022
-
Abstract
- The effect of yttrium doping on the phase transition properties and crystal structure of Ge1Sb9 thin films was studied. Y-doped Ge1Sb9 thin films have higher crystallization temperature (218 °C) and data retention capacity (141.2 °C for 10 years), revealing that Y doping improves amorphous thermal stability. X-ray diffraction and X-ray photoelectron spectroscopy analysis show that the addition of yttrium could inhibit grain growth and restrict the grain size due to the formation of amorphous Y and Ge components. X-ray reflectivity results show that yttrium doping results in less volume change, which predicts the enhanced performance stability of the device. A T-shaped phase change memory cell based on the Y0.26(Ge1Sb9)0.74 films exhibits a faster operation speed (100 ns) and lower power consumption (2.4 × 10−10 J) than traditional Ge2Sb2Te5 materials. The results reveal that Y-doped Ge1Sb9 is a phase change memory material with good structural properties and device performance. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 14668033
- Database :
- Academic Search Index
- Journal :
- CrystEngComm
- Publication Type :
- Academic Journal
- Accession number :
- 158668179
- Full Text :
- https://doi.org/10.1039/d2ce00691j