Cite
Error correction improvement based on weak-bit-flipping for resistive memories.
MLA
Gherman, Valentin, et al. “Error Correction Improvement Based on Weak-Bit-Flipping for Resistive Memories.” Microelectronics Reliability, vol. 136, Sept. 2022, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.microrel.2022.114669.
APA
Gherman, V., Ciampolini, L., Evain, S., & Ricavy, S. (2022). Error correction improvement based on weak-bit-flipping for resistive memories. Microelectronics Reliability, 136, N.PAG. https://doi.org/10.1016/j.microrel.2022.114669
Chicago
Gherman, Valentin, Lorenzo Ciampolini, Samuel Evain, and Sébastien Ricavy. 2022. “Error Correction Improvement Based on Weak-Bit-Flipping for Resistive Memories.” Microelectronics Reliability 136 (September): N.PAG. doi:10.1016/j.microrel.2022.114669.