边缺陷诱导的双层锯齿型石墨烯纳米带能隙.

Zigzag bilayer graphene nanoribbons are gapless, which is not good at the design of graphene field effect transistors. The edge line defects can open the band gap and the edge state localized on both sides may be tuned on one side, which provides theoretical support for the design of bilayer graphene nanodevices. The energy spectrum and lattice wave function of bilayer zigzag graphene nanoribbons are calculated by using the tight-binding model. The numerical results show that the hopping between edge line defects can open the AA stacking gap, and the on-site energy of edge line defects can open the AB stacking gap. The weak localization behavior in the bilayer zigzag graphene nanoribbons is different from that of single layer. The defect on-site energy and interlayer hopping can change the localized edge state, respectively. Appropriate defect on-site energy can make the electrons dominant in the upper layer (or lower layer). The electron transport of two-terminal bilayer zigzag graphene nanoribbons was investigated by using the non-equilibrium Green's function method, and the local state density and transmission probability of the system with edge defect were calculated. [ABSTRACT FROM AUTHOR]