Cite
Improved gradual resistive switching range and 1000× on/off ratio in HfOx RRAM achieved with a Ge2Sb2Te5 thermal barrier.
MLA
Islam, R., et al. “Improved Gradual Resistive Switching Range and 1000× on/off Ratio in HfOx RRAM Achieved with a Ge2Sb2Te5 Thermal Barrier.” Applied Physics Letters, vol. 121, no. 8, Aug. 2022, pp. 1–7. EBSCOhost, https://doi.org/10.1063/5.0101417.
APA
Islam, R., Qin, S., Deshmukh, S., Yu, Z., Köroğlu, C., Khan, A. I., Schauble, K., Saraswat, K. C., Pop, E., & Wong, H.-S. P. (2022). Improved gradual resistive switching range and 1000× on/off ratio in HfOx RRAM achieved with a Ge2Sb2Te5 thermal barrier. Applied Physics Letters, 121(8), 1–7. https://doi.org/10.1063/5.0101417
Chicago
Islam, R., S. Qin, S. Deshmukh, Z. Yu, C. Köroğlu, A. I. Khan, K. Schauble, K. C. Saraswat, E. Pop, and H.-S. P. Wong. 2022. “Improved Gradual Resistive Switching Range and 1000× on/off Ratio in HfOx RRAM Achieved with a Ge2Sb2Te5 Thermal Barrier.” Applied Physics Letters 121 (8): 1–7. doi:10.1063/5.0101417.