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Tailoring skyrmion motion dynamics via magnetoelectric coupling: Toward highly energy-efficient and reliable non-volatile memory applications.
- Source :
-
Journal of Applied Physics . 8/28/2022, Vol. 132 Issue 8, p1-8. 8p. - Publication Year :
- 2022
-
Abstract
- Owing to the intriguing physical properties and significant spintronic applications, magnetic skyrmions have recently drawn intensive attention. Particularly, the skyrmion-based non-volatile memory (Sky-NVM) devices promise to be spintronic building blocks with high efficiency. However, tailoring Sky-NVM to achieve an energy-efficient and reliable operation in a synthetic, CMOS compatible, and magnetic-field-free integration is a challenging issue. Here, we report a new type of compact Sky-NVM with tailored skyrmion motion dynamics via in-plane strain gradient engineering. The skyrmion motion is merely driven by an in-plane electric field utilizing the magnetoelectric coupling effect, and the programmable switching is realized by gate biasing the potential barrier height via a voltage-controlled magnetic anisotropy. The proposed device is CMOS process compatible, and the comprehensive micromagnetic simulation results demonstrate that by applying a 0.3 V in-plane voltage combined with −0.17 V gate voltage, its write latency and the energy consumption reach 5.85 ns and 4.77 aJ/bit, respectively, superior to the state-of-the-art counterparts. Our work paves a new path toward ultra-low-power spintronic memory devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 132
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 158852954
- Full Text :
- https://doi.org/10.1063/5.0103237