A review of gallium oxide-based power Schottky barrier diodes.

Gallium oxide (Ga2O3) is a representative of ultra-wide bandgap semiconductors, with a band gap of about 4.9 eV. In addition to a large dielectric constant and excellent physical and chemical stability, Ga2O3 has a theoretical breakdown electric field strength of more than 8 MV cmâˆ'1, which is 27 times more than that of Si and about twice as large as that of SiC and GaN. It is guaranteed that Ga2O3 has irreplaceable applications in ultra-high-power (1â€"10 kW) electronic devices. Unfortunately, due to the difficulty of p-type doping of Ga2O3, the full Ga2O3-based bipolar devices face more difficulties, and the unipolar Ga2O3 power Schottky diodes are feasible, but substantial progress has been made in recent years. In this article, we review the advanced progress and important achievements of the state-of-the-art Ga2O3-based power Schottky barrier diodes, and provide staged guidance for the further development of Ga2O3 power devices. Multiple types of device architectures, including basic structure, edge terminal processing, field-plated, trench and heterojunction pâ€"n structure, will be discussed in detail. [ABSTRACT FROM AUTHOR]