Cite
High Performance InP‐based Quantum Dot Light‐Emitting Diodes via the Suppression of Field‐Enhanced Electron Delocalization.
MLA
Li, Haiyang, et al. “High Performance InP‐based Quantum Dot Light‐Emitting Diodes via the Suppression of Field‐Enhanced Electron Delocalization.” Advanced Functional Materials, vol. 32, no. 38, Sept. 2022, pp. 1–9. EBSCOhost, https://doi.org/10.1002/adfm.202204529.
APA
Li, H., Bian, Y., Zhang, W., Wu, Z., Ahn, T. K., Shen, H., & Du, Z. (2022). High Performance InP‐based Quantum Dot Light‐Emitting Diodes via the Suppression of Field‐Enhanced Electron Delocalization. Advanced Functional Materials, 32(38), 1–9. https://doi.org/10.1002/adfm.202204529
Chicago
Li, Haiyang, Yangyang Bian, Wenjing Zhang, Zhenghui Wu, Tae Kyu Ahn, Huaibin Shen, and Zuliang Du. 2022. “High Performance InP‐based Quantum Dot Light‐Emitting Diodes via the Suppression of Field‐Enhanced Electron Delocalization.” Advanced Functional Materials 32 (38): 1–9. doi:10.1002/adfm.202204529.