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Comparative Analysis and Performance Optimization of Low-Cost Solution-Processed Hybrid Perovskite-Based Solar Cells With Different Organic HTLs.

Authors :
Jarwal, Deepak Kumar
Dubey, Chandani
Baral, Kamalaksha
Bera, Anuradha
Rawat, Gopal
Source :
IEEE Transactions on Electron Devices. Sep2022, Vol. 69 Issue 9, p5012-5020. 9p.
Publication Year :
2022

Abstract

In this work, we have investigated perovskite-based solar cells (PSCs) with seven different organic hole transport layers (HTLs), which include spiro-2,2’,7,7’-Tetr- akis-(N, N-di-4-methoxyphenylamino) −9,9’-spirobifluorene (OMeTAD), poly(triaryl amine) (PTAA), poly (3,3”’-dialkyl- quaterthiophene) (PQT), poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), poly (3-hexylthioph- ene-2,5-diyl) (P3HT), Poly [2-methoxy-5-(2’-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), and n-Propyl Bromide (nPB). This article reports the impact of several device parameters, such as perovskite layer defect density, and thickness, on the solar cell performance. We examined the device performance for the PSC device architecture, i.e., fluorine-doped tin oxide (FTO)/TiO2/CH3NH3PbI3/HTLs/Au. For this study, numerical simulation has been performed and optimized for optimum absorber layer thickness and defect density. In this study, we report the power conversion efficiency (PCE) with various HTLs, such as 10.01% for MEH-PPV, 13.94% for PEDOT:PSS, 14.75% for P3HT, 15.42% for PQT, 15.74% for NPB, 17.08% for PTAA, and 17.11% for spiro-OMeTAD at an optimized thickness of 300 nm. It is asserted that there is an enhancement in the photovoltaic performance observed while using spiro-OMeTAD and PTAA as HTL. PSC using spiro-OMeTAD as HTL shows exceptional performance compared to other HTLs. Other parameters obtained for PSC using spiro-OMeTAD are ${V}_{OC}$ of 1.10 V, ${J}_{SC}$ of 20.772 mA/cm2, FF of 0.74%, and PCE of 17.11%. The elicited simulation results suggest that spiro-OMeTAD is the most promising candidate for HTL to fabricate low-cost, highly efficient, and low-temperature processed hybrid PSC. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
69
Issue :
9
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
159195093
Full Text :
https://doi.org/10.1109/TED.2022.3194106