Cite
Field Effect Transistor Sensors Based on In‐Plane 1T′/2H/1T′ MoTe2 Heterophases with Superior Sensitivity and Output Signals.
MLA
Zhang, Shichao, et al. “Field Effect Transistor Sensors Based on In‐Plane 1T′/2H/1T′ MoTe2 Heterophases with Superior Sensitivity and Output Signals.” Advanced Functional Materials, vol. 32, no. 41, Oct. 2022, pp. 1–10. EBSCOhost, https://doi.org/10.1002/adfm.202205299.
APA
Zhang, S., Wu, Y., Gao, F., Shang, H., Zhang, J., Li, Z., Fu, Y., & Hu, P. (2022). Field Effect Transistor Sensors Based on In‐Plane 1T′/2H/1T′ MoTe2 Heterophases with Superior Sensitivity and Output Signals. Advanced Functional Materials, 32(41), 1–10. https://doi.org/10.1002/adfm.202205299
Chicago
Zhang, Shichao, You Wu, Feng Gao, Huiming Shang, Jia Zhang, Zhonghua Li, YongQing Fu, and PingAn Hu. 2022. “Field Effect Transistor Sensors Based on In‐Plane 1T′/2H/1T′ MoTe2 Heterophases with Superior Sensitivity and Output Signals.” Advanced Functional Materials 32 (41): 1–10. doi:10.1002/adfm.202205299.