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A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching.
- Source :
-
Materials (1996-1944) . Oct2022, Vol. 15 Issue 19, p6690. 6p. - Publication Year :
- 2022
-
Abstract
- A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance ( C gd ) and reduce the specific ON-resistance ( R on , sp ) of 4H-SiC planar power MOSFETs. The Dod and the octagonal (Oct) cells are used in the layout design of the 650 V SiC MOSFETs in this work. The experimental results confirm that the Dod-cell MOSFET achieves a 2.2× lower R on , sp , 2.1× smaller high-frequency figure of merit (HF-FOM), higher turn on/off dv/dt, and 29% less switching loss than the fabricated Oct-cell MOSFET. The results demonstrate that the Dod cell is an attractive candidate for high-frequency power applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- *TOPOLOGY
*ELECTRIC capacity
*METAL oxide semiconductor field-effect transistors
Subjects
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 15
- Issue :
- 19
- Database :
- Academic Search Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 159668480
- Full Text :
- https://doi.org/10.3390/ma15196690