Cite
Doping-dependent nucleation of basal plane dislocations in 4H-SiC.
MLA
Liu, Xiaoshuang, et al. “Doping-Dependent Nucleation of Basal Plane Dislocations in 4H-SiC.” Journal of Physics D: Applied Physics, vol. 55, no. 33, Aug. 2022, pp. 1–7. EBSCOhost, https://doi.org/10.1088/1361-6463/ac7178.
APA
Liu, X., Wang, R., Zhang, J., Lu, Y., Zhang, Y., Yang, D., & Pi, X. (2022). Doping-dependent nucleation of basal plane dislocations in 4H-SiC. Journal of Physics D: Applied Physics, 55(33), 1–7. https://doi.org/10.1088/1361-6463/ac7178
Chicago
Liu, Xiaoshuang, Rong Wang, Junran Zhang, Yunhao Lu, Yiqiang Zhang, Deren Yang, and Xiaodong Pi. 2022. “Doping-Dependent Nucleation of Basal Plane Dislocations in 4H-SiC.” Journal of Physics D: Applied Physics 55 (33): 1–7. doi:10.1088/1361-6463/ac7178.