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Effect of pre-annealing of Mo foil substrate on CZTSSe thin films and Mo(S,Se)2 interface layer.
- Source :
-
Chalcogenide Letters . Sep2022, Vol. 19 Issue 9, p599-609. 11p. - Publication Year :
- 2022
-
Abstract
- Cu2ZnSn(S,Se)4 (CZTSSe) thin film deposited on flexible Mo foil substrate has advantage of high mass specific power and good ductility. However, a thick Mo(S,Se)2 interface layer is easily to be formed between CZTSSe and Mo foil substrate. The ohmic contact property of CZTSSe/Mo is deteriorated by the formation of Mo(S,Se)2. In this work, the Mo foil substrate was pre-annealed to inhibit the growth of Mo(S,Se)2 interface layer. CZTSSe thin films were prepared on the pre-annealed Mo foil substrate by sol-gel and selenization methods. The pre-annealing treatment of Mo foil substrate leads to the oxidation of Mo. During the high temperature selenization process, the MoOx acts as a buffer layer to suppress the formation of the Mo(S,Se)2 interface layer. With the increase of the pre-annealing temperature of the Mo foil substrate, the thickness of the Mo(S,Se)2 interface layer decreases, and the resistance of CZTSSe/Mo(S,Se)2/Mo structure decreases. The ohmic contact properties of CZTSSe/Mo can be improved by the pre-annealing treatment of metal Mo foil substrates. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18414834
- Volume :
- 19
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Chalcogenide Letters
- Publication Type :
- Academic Journal
- Accession number :
- 159778911
- Full Text :
- https://doi.org/10.15251/CL.2022.199.599