The facile implementing ternary resistive memory in graphite-like melamine-cyanuric acid hydrogen-bonded organic framework with high ternary yield and environmental tolerance.

The robust graphite-like melamine-cyanuric acid hydrogen-bonded organic framework was firstly fabricated as a new type of ternary memorizer with a high ternary yield and good environmental tolerances, whose mechanism is the filled traps in 2D layer (ON1) and the carriers flowing in 3D network (ON2) upon external voltage. This HOF-based ternary memorizer can pave a new way for efficient and facial implementation of multi-level memory. [Display omitted] • Melamine (M)-cyanuric acid (C) hydrogen-bonded organic framework (M−C HOF) was firstly fabricated as a new type of ternary memorizer. • The FTO/ M−C /Ag device exhibits considerable OFF/ON1/ON2 current ratio of 1:103.1:104.6, relatively low set voltages (1.14 and 1.70 V) and high ternary device yield of 74 %. • The ternary memorizer is ascribed to the filled traps in 2D layer (for ON1 state) and the carriers flowing in 3D network (for ON2 state). • This ternary memorizer has superior thermal stability (300 °C) and irradiative tolerance. The low ternary yield and expensive organic active materials hinder the potential industrialization of organic multi-level resistive memories. Here, facile melamine (M)-cyanuric acid (C) hydrogen-bonded organic framework (M−C HOF) was firstly fabricated as a new type of ternary memorizer. In the M−C HOF, the robust graphite-like planar 2D sheet along ab -plane containing a rosette motif is constructed from nine hydrogen bonds among M and C , and the 2D sheets are stacked into a 3D network through strong π – π stacking interactions. The FTO/ M−C /Ag device exhibits a typical ternary memory performance with considerable OFF/ON1/ON2 current ratio of 1:103.1:104.6, relatively low set voltages (1.14 and 1.70 V), good reliability, and high ternary device yield of 74 %. The ternary resistive switching behavior could be ascribed to the filled traps in 2D layer (for ON1 state) and the carriers flowing in 3D network (for ON2 state), which have been verified by quenched fluorescence of isolated M and C , increased (2 0 1) lattice plane distance upon external voltages. Besides, this ternary memorizer has superior thermal stability (300 °C) and irradiative tolerance. This attempt of HOF-based ternary memorizer presents a new choice for efficient and facial multi-level resistive material. [ABSTRACT FROM AUTHOR]