Cite
Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET).
MLA
Sun, Chong-Jhe, et al. “Threshold Voltage Adjustment by Varying Ge Content in SiGe P-Channel for Single Metal Shared Gate Complementary FET (CFET).” Nanomaterials (2079-4991), vol. 12, no. 20, Oct. 2022, p. 3712–N.PAG. EBSCOhost, https://doi.org/10.3390/nano12203712.
APA
Sun, C.-J., Wu, C.-H., Yao, Y.-J., Lin, S.-W., Yan, S.-C., Lin, Y.-W., & Wu, Y.-C. (2022). Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET). Nanomaterials (2079-4991), 12(20), 3712–N.PAG. https://doi.org/10.3390/nano12203712
Chicago
Sun, Chong-Jhe, Chen-Han Wu, Yi-Ju Yao, Shan-Wen Lin, Siao-Cheng Yan, Yi-Wen Lin, and Yung-Chun Wu. 2022. “Threshold Voltage Adjustment by Varying Ge Content in SiGe P-Channel for Single Metal Shared Gate Complementary FET (CFET).” Nanomaterials (2079-4991) 12 (20): 3712–N.PAG. doi:10.3390/nano12203712.