Cite
Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure.
MLA
Du, Hanghai, et al. “Low Ohmic Contact Resistivity Realized by in Situ SiNx Insertion for High Al-Composition-AlGaN/GaN Heterostructure.” Applied Physics Letters, vol. 121, no. 17, Oct. 2022, pp. 1–5. EBSCOhost, https://doi.org/10.1063/5.0100329.
APA
Du, H., Liu, Z., Hao, L., Xing, W., Zhang, W., Zhou, H., Zhang, J., & Hao, Y. (2022). Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure. Applied Physics Letters, 121(17), 1–5. https://doi.org/10.1063/5.0100329
Chicago
Du, Hanghai, Zhihong Liu, Lu Hao, Weichuan Xing, Weihang Zhang, Hong Zhou, Jincheng Zhang, and Yue Hao. 2022. “Low Ohmic Contact Resistivity Realized by in Situ SiNx Insertion for High Al-Composition-AlGaN/GaN Heterostructure.” Applied Physics Letters 121 (17): 1–5. doi:10.1063/5.0100329.