Online monitoring and correction method of threshold voltage in SiC MOSFET power cycling test.

This paper presents an online monitoring and correction method of threshold voltage in SiC MOSFET power cycling test. The results of online monitoring of threshold voltage are coupled with both the effect of the degradation of SiC MOSFET chip and the effect of junction temperature variation caused by the degradation of the package. The proposed correction method can eliminate the influence of the junction temperature variation. And the effect of the chip degradation on the threshold voltage can be well reflected in the corrected results. The experimental results prove the effectiveness of the proposed method. • This paper focuses on the chip degradation in SiC MOSFET power cycling test. • The influence of package degradation on the online monitoring results of threshold voltage is taken into account. • The linear relationship of V th and T j can be utilized to eliminate the effect of T j variation on V th monitoring results. [ABSTRACT FROM AUTHOR]