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N-polar GaN evolution on nominally on-axis c-plane sapphire by MOCVD part-I: Growth optimization.
- Source :
-
Materials Science & Engineering: B . Dec2022, Vol. 286, pN.PAG-N.PAG. 1p. - Publication Year :
- 2022
-
Abstract
- The present work is part-I of a study that demonstrates the influence of metalorganic chemical vapor deposition process parameters on the evolution of gallium nitride (GaN) deposited in a two-step growth process on c-plane sapphire substrates with a particular emphasis on nitrogen-polar GaN (N-polar GaN). First, the temperature domains of sapphire nitridation that result in Ga-polar and N-polar GaN epilayers were identified. Then, the structural and morphological evolution of low-temperature GaN nucleation layers were examined at the observed temperature domains of nitridation. Subsequently, a series of experiments were performed to study the influence of Ga and N precursor flow rates and epilayer growth temperature on the surface evolution of N-polar GaN. The observed results were analyzed in terms of thermodynamic and kinetic parameters of GaN growth. This work reports high-surface quality N-polar GaN epilayers without surface hillocks, exhibiting surface roughness about 1.5 nm over 2 × 2 μ m 2 area and with good crystalline quality on nominally on-axis c-plane sapphire substrates at low epilayer growth temperatures. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09215107
- Volume :
- 286
- Database :
- Academic Search Index
- Journal :
- Materials Science & Engineering: B
- Publication Type :
- Academic Journal
- Accession number :
- 160030518
- Full Text :
- https://doi.org/10.1016/j.mseb.2022.116038