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Study on high temperature model based on the n-Channel planar 4H-SiC MOSFET.
- Source :
-
Circuit World . 2022, Vol. 48 Issue 4, p401-411. 11p. - Publication Year :
- 2022
-
Abstract
- Purpose: To use the 4H-SiC material in integrated circuits for high temperature application, an accurate and simple circuit model of n-channel planar 4H-SiC MOSFET is required. Design/methodology/approach: In this paper, a SPICE model of n-channel planar 4H-SiC MOSFET was built based on the device simulation results and measurement results. Firstly, a device model was simulated with Sentaurus TCAD, with measured parameters from fabricated planar 4H-SiC MOSFET previously. Then the device simulation results were analyzed and parameters for SPICE models were extracted. With these parameters, an accurate SPICE model was built and simulated. Findings: The SPICE model exhibits the same performance as the measured results with different environment temperatures. The simulation results indicate that the maximum fitting error is 0.22 mA (7.33% approximately) at 200 °C. A common-source amplifier with this model is also simulated and the simulated gain is stable at different environment temperatures. Originality/value: This paper provides a reliable modeling method for n-Channel Planar 4H-SiC MOSFET and reference value for the design of 4H-SiC high temperature integrated circuit. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03056120
- Volume :
- 48
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Circuit World
- Publication Type :
- Academic Journal
- Accession number :
- 160365633
- Full Text :
- https://doi.org/10.1108/CW-12-2020-0351