Cite
A Comprehensive Evaluation of Integrated Circuits Side-Channel Resilience Utilizing Three-Independent-Gate Silicon Nanowire Field Effect Transistors-Based Current Mode Logic.
MLA
Liu, Yanjiang, et al. “A Comprehensive Evaluation of Integrated Circuits Side-Channel Resilience Utilizing Three-Independent-Gate Silicon Nanowire Field Effect Transistors-Based Current Mode Logic.” IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems, vol. 41, no. 10, Oct. 2022, pp. 3228–38. EBSCOhost, https://doi.org/10.1109/TCAD.2021.3128364.
APA
Liu, Y., He, J., Ma, H., Qu, T., & Dai, Z. (2022). A Comprehensive Evaluation of Integrated Circuits Side-Channel Resilience Utilizing Three-Independent-Gate Silicon Nanowire Field Effect Transistors-Based Current Mode Logic. IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems, 41(10), 3228–3238. https://doi.org/10.1109/TCAD.2021.3128364
Chicago
Liu, Yanjiang, Jiaji He, Haocheng Ma, Tongzhou Qu, and Zibin Dai. 2022. “A Comprehensive Evaluation of Integrated Circuits Side-Channel Resilience Utilizing Three-Independent-Gate Silicon Nanowire Field Effect Transistors-Based Current Mode Logic.” IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems 41 (10): 3228–38. doi:10.1109/TCAD.2021.3128364.