Research progress on silicon carbide photocatalyst.

The design and synthesis of photocatalytic materials and their application in environmental pollution control and resource recycling have been reported in many literatures. However, most photocatalytic materials contain transition metal ions, and the environmental risks of leaching 1imit the application of catalytic materials. Silicon carbide (SiC), as the representative of the third generation of semiconductor materials, has a good potential application prospect in environmental pollution prevention because of Is characteristics such as no transition metal ions, high temperature and acid-alkali resistance, strong stability and so on. In recent years, some literatures have reported the synthesis, modification and application of SiC as photocatalyst n environment and resource recycling -fields. However, few temperatures have reviewed the application progress of SiC photocatalyst. In view of the above situation, the progress in the -field of SiC photocatalysis application in recent years was reviewed in tins paper, including synthesis method, doping medication and application, and the prospects of the photocatalyst system were also prospected. [ABSTRACT FROM AUTHOR]