Design of Cu-MWCNT Based Heterogeneous Coaxial through Silicon Vias for High-Speed VLSI Applications.

This paper introduces a new method to reduce the crosstalk effects in copper-multiwalled carbon nanotube (Cu-MWCNT) based heterogeneous coaxial through-silicon vias (HCTSVs) for three-dimensional integrated circuits (3D ICs). The proposed HCTSV structure utilizes Cu-MWCNT bundles as a conducting material and polymer liners such as polyimide, polypropylene carbonate (PPC) and benzo cyclobutene (BCB) as dielectric materials. The crosstalk effects such as functional and dynamic crosstalks are evaluated for the coupled HCTSVs by using an electrical equivalent model implemented in synopsis based HSPICE simulator. Moreover, the other performance parameters such as power consumption, power delay product (PDP) and energy delay product (EDP) are analyzed. From the analysis, it is noticed a significant improvement in crosstalk effects, power consumption, PDP, and EDP for polymer liners over the conventional silicon dioxide liner. Moreover, the performance is also evaluated by changing the different heights of HCTSVs from 50 to 200 μm, respectively. It is observed that the performance of the coupled HCTSVs are increased as the TSV height is reduced. [ABSTRACT FROM AUTHOR]