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Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design.

Details

Language :
English
ISSN :
15671739
Volume :
46
Database :
Academic Search Index
Journal :
Current Applied Physics
Publication Type :
Academic Journal
Accession number :
161122026
Full Text :
https://doi.org/10.1016/j.cap.2022.11.011