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Exploring the effect of oxygen environment on the Mo/CdTe/CdSe solar cell substrate configuration.

Authors :
Yang, Xiutao
Long, Yuchen
Zheng, Yujie
Wang, Jiayi
Zhou, Biao
Xie, Shenghui
Li, Bing
Zhang, Jingquan
Hao, Xia
Karazhanov, Smagul
Zeng, Guanggen
Feng, Lianghuan
Source :
Materials Science in Semiconductor Processing. Mar2023, Vol. 156, pN.PAG-N.PAG. 1p.
Publication Year :
2023

Abstract

Incorporating Se element into Cadmium telluride (CdTe)-based superstrate configuration solar cells have advanced impressively. However, molybdenum (Mo)/CdTe/CdSe substrate configuration devices remain relatively unexplored, and Mo foil oxidation behavior during the fabrication process is kept in the dark. This work investigates a fresh CdTe/CdSe substrate configuration solar cell using Mo substrates. Mo/CdTe/CdSe/ZnO/AZO/ITO solar cells have been fabricated, CdTe absorber layer was obtained by closed space sublimation (CSS) under ∼2000 pa pressure in varying Ar/O 2 flu ratio. The champion device had an efficiency of 3.87% with unintentional Cu-doping and back contact. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-Ray spectroscopy (EDS) were applied to study the properties of CdTe films. Before CdTe deposition, molybdenum oxide (MoO x) was generated while heating the Mo substrate in an oxygen-containing environment. This buffer layer plays a pivotal role in blocking non-Ohmic back contact analyzed by current-voltage-temperature (J-V-T) measurements. Molybdenum oxidation states were extensively studied to build the relationship with a solar cell device. Our findings indicated that different oxygen partial pressure had less relevance with the CdTe surface chemical environment but was incredibly relevant for Mo metal foil oxidation states. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
13698001
Volume :
156
Database :
Academic Search Index
Journal :
Materials Science in Semiconductor Processing
Publication Type :
Academic Journal
Accession number :
161280348
Full Text :
https://doi.org/10.1016/j.mssp.2022.107267