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A CuxS/GO composite hole transport layer for photovoltaic performance enhancement on CuInS2 quantum dot-sensitized solar cells.
- Source :
-
Applied Physics A: Materials Science & Processing . Jan2023, Vol. 129 Issue 1, p1-5. 5p. - Publication Year :
- 2023
-
Abstract
- In this work, a CuxS/GO composite hole transport layer is prepared on the surface of TiO2/CuInS2 photo-electrodes to modulate the charge transfer efficiency of quantum dot-sensitized solar cells. The normalized PL intensity of TiO2/CuInS2 photo-electrodes had been obviously quenched with the as-prepared CuxS/GO composite hole transport layer, which had exhibited excellent charge separation properties of the solar cells. Due to the reduce of charge recombination traps under CuxS/GO composite hole transport layer, the charge transfer efficiency of the solar cells had been effectively improved. As a result, the higher Voc, FF and Jsc value can be obtained for TiO2/CuInS2 quantum dot sensitized solar cells with this CuxS/GO composite hole transport layer, which had exhibited the photovoltaic conversion efficiency enhancement from 4.85% to 6.07%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 129
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 161349393
- Full Text :
- https://doi.org/10.1007/s00339-022-06330-1