Cite
The effect of Schottky barrier modulation on conduction and failure mechanisms of an Ag/WOx/p-Si based memristor.
MLA
Park, Taehoon, et al. “The Effect of Schottky Barrier Modulation on Conduction and Failure Mechanisms of an Ag/WOx/p-Si Based Memristor.” Journal of Applied Physics, vol. 133, no. 7, Feb. 2023, pp. 1–8. EBSCOhost, https://doi.org/10.1063/5.0131593.
APA
Park, T., Jeong, H., Park, S.-O., Hong, S. M., Seo, S., Park, S., & Choi, S. (2023). The effect of Schottky barrier modulation on conduction and failure mechanisms of an Ag/WOx/p-Si based memristor. Journal of Applied Physics, 133(7), 1–8. https://doi.org/10.1063/5.0131593
Chicago
Park, Taehoon, Hakcheon Jeong, See-On Park, Seok Man Hong, Seokho Seo, Seungwoo Park, and Shinhyun Choi. 2023. “The Effect of Schottky Barrier Modulation on Conduction and Failure Mechanisms of an Ag/WOx/p-Si Based Memristor.” Journal of Applied Physics 133 (7): 1–8. doi:10.1063/5.0131593.