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Tunable transport properties of dual-gated InAs/GaSb core/shell nanowires.
- Source :
-
Journal of Applied Physics . 2/28/2023, Vol. 133 Issue 8, p1-6. 6p. - Publication Year :
- 2023
-
Abstract
- Dual-gate structures were fabricated on a single high-quality InAs/GaSb core/shell nanowire, enabling control of the band structure and Fermi level in the crossed bandgap heterostructure. The nanowire was grown using the molecular-beam-epitaxy method in a pure crystal phase for both the core and the shell. We demonstrated clear ambipolar transport characteristics derived separately from n-type InAs and p-type GaSb. A relatively high resistance region was found between n- and p-type conduction regions; the entrance to an energy gap was thus indicated. The gap's size varied with the electric fields of dual gates and could even be closed; after closure, a weak and non-vanishing energy gap appeared. The reopened energy gap was considerably suppressed in an in-plane magnetic field only when the field was perpendicular to the axis of the nanowire (i.e., the current direction) and was identified as an electron–hole interaction induced hybridization gap. [ABSTRACT FROM AUTHOR]
- Subjects :
- *NANOWIRES
*ELECTRIC fields
*MAGNETIC fields
*FERMI level
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 133
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 162171815
- Full Text :
- https://doi.org/10.1063/5.0130623