One-step crystallization in (Ge2Sb2Te5)90Ga10 thin film.

[Display omitted] • The composition Ge 2 Sb 2 Te 5 is widely studied for its application in memory devices. • 10% Ga doped in Ge 2 Sb 2 Te 5 thin film is noted to improve its properties further. • Nearly same optical contrast in amorphous to fcc phase and amorphous to hcp phase. • Thermal stabilization of fcc phase with annealing of (Ge 2 Sb 2 Te 5) 90 Ga 10 thin film. • Findings on ((Ge 2 Sb 2 Te 5) 90 Ga 10 thin film, supported the suppression of hcp phase. Owing to data storage ability of chalcogenide based Ge 2 Sb 2 Te 5 phase change alloy, this composition has been tremendously explored for its application in memory devices. Upon annealing, this composition exhibit two step crystallization, i.e, amorphous -to- fcc , and then from fcc -to- hcp phase. To address the issue of power consumption in such phase transitions, the present study is reporting one-step crystallization in (Ge 2 Sb 2 Te 5) 90 Ga 10 thin film, i.e. , from amorphous -to- fcc phase which is confirmed by optical transmission contrast studies. Thus, the results poses the promising data storage applicability of (Ge 2 Sb 2 Te 5) 90 Ga 10 thin film in phase change memory devices. [ABSTRACT FROM AUTHOR]