Comparing the effect of synthesis techniques on the semiconductor-metal transition of VO2 thin films.

• Comparison of two industrially scalable deposition techniques to develop large areas of VO 2. • UNSPACM is a cost-effective process that achieves electrically superior VO 2. • CVD is used to develop optically superior VO 2 over large areas. • Where optical applications are crucial, roughness is a key and CVD is preferred. • Different synthesis process alters morphology and stoichiometry. We compare the effect of two synthesis methods namely Chemical Vapor Deposition (CVD) and Ultrasonic Nebulized Spray Pyrolysis of Aqueous Combustion Mixture (UNSPACM) on the Semiconductor-Metal Transition (SMT) characteristics of VO 2 thin films. The SMT characteristics of the films are measured electrically and optically. CVD films show a lower resistance ratio and SMT strength, whereas films synthesized via UNSPACM are rougher. We ascribe the reason for the observed behaviour to morphology and off-stoichiometry arising from the deposition process. [ABSTRACT FROM AUTHOR]