Back to Search
Start Over
Efficiency Improvement of Industrial Silicon Solar Cells by the POCl 3 Diffusion Process.
- Source :
-
Materials (1996-1944) . Mar2023, Vol. 16 Issue 5, p1824. 9p. - Publication Year :
- 2023
-
Abstract
- To improve the efficiency of polycrystalline silicon solar cells, process optimization is a key technology in the photovoltaic industry. Despite the efficiency of this technique to be reproducible, economic, and simple, it presents a major inconvenience to have a heavily doped region near the surface which induces a high minority carrier recombination. To limit this effect, an optimization of diffused phosphorous profiles is required. A "low-high-low" temperature step of the POCl3 diffusion process was developed to improve the efficiency of industrial-type polycrystalline silicon solar cells. The low surface concentration of phosphorus doping of 4.54 × 1020 atoms/cm3 and junction depth of 0.31 μm at a dopant concentration of N = 1017 atoms/cm3 were obtained. The open-circuit voltage and fill factor of solar cells increased up to 1 mV and 0.30%, compared with the online low-temperature diffusion process, respectively. The efficiency of solar cells and the power of PV cells were increased by 0.1% and 1 W, respectively. This POCl3 diffusion process effectively improved the overall efficiency of industrial-type polycrystalline silicon solar cells in this solar field. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 16
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 162349640
- Full Text :
- https://doi.org/10.3390/ma16051824