Enhancing the Performance of Electret‐Free Phototransistor Memory by Using All‐Conjugated Block Copolymer.

Conjugated polymers are of great interest owing to their potential in stretchable electronics to function under complex deformation conditions. To improve the performance of conjugated polymers, various structural designs have been proposed and these conjugated polymers are specially applied in exotic optoelectronics. In this work, a series of all‐conjugated block copolymers (PII2T‐b‐PNDI2T) comprising poly(isoindigo–bithiophene) (PII2T) and poly(naphthalenediimide–bithiophene) (PNDI2T) are developed with varied compositions and applied to electret‐free phototransistor memory. Accordingly, these memory devices present p‐type transport capability and electrical‐ON/photo‐OFF memory behavior. The efficacy of the all‐conjugated block copolymer design in improving the memory‒photoresponse properties in phototransistor memory is revealed. By optimizing the composition of the block copolymer, the corresponding device achieves a wide memory window of 36 V and a high memory ratio of 7 × 104. Collectively, the results of this study indicate a new concept for designing electret‐free phototransistor memory by using all‐conjugated block copolymer heterojunctions to mitigate the phase separation of conjugated polymer blends. Meanwhile, the intrinsic optoelectronic properties of the constituent conjugated polymers can be well‐maintained by using an all‐conjugated block copolymer design. [ABSTRACT FROM AUTHOR]