Interfacial modification of in-situ polymerized AMPS/NiFe2O4 quantum dots for efficient and air-stable CsPbBr3 perovskite solar cells.

[Display omitted] • The PAMPS/NQDs with higher hole mobility and conductivity improves hole transport. • Modifying PAMPS/NQDs induced lower interfacial energy barrier boosts hole extraction. • The PAMPS/NQDs heals the defects of CsPbBr 3 film and enhances the hydrophobicity. • The unsealed device achieves a best PCE of 10.21% and excellent long-term stability. The regulation of the interface energetics and the simultaneous passivation of the surface defects of perovskite (PVK) film play an important role in improving the efficiency and stability of perovskite solar cells (PSCs). Here, a composite modification of poly(2-acrylamide-2-methylpropanesulfonic acid) (PAMPS)/NiFe 2 O 4 quantum dots (NQDs) that is formed by the light-triggered polymerization of AMPS monomer in homogeneous AMPS/NQDs is launched at the interface of PVK/carbon in all-inorganic CsPbBr 3 PSCs. Due to the higher hole mobility and conductivity of PAMPS/NQDs and its interface modification induced better energy level alignment and interfacial contact, the hole transport and extraction are significantly promoted. Combined with the simultaneous passivation of cations and anions (Cs+, Pb2+ and Br-) defects on CsPbBr 3 PVK surface by the S O, C O, N H and O H groups in PAMPS, the non-radiative recombination is effectively restrained, rendering a champion power conversion efficiency of 10.21 % with excellent high humidity and temperature (85 % RH, 85 °C) and light soaking tolerances for PAMPS/NQDs composite modified carbon-based CsPbBr 3 PSCs without encapsulation in air, which is markedly higher than the 6.81 % efficiency of the control device. [ABSTRACT FROM AUTHOR]