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Multilevel resistive switching in solution-processed CuFe2O4/TiO2 heterostructure.
- Source :
-
Applied Physics Letters . Mar2023, Vol. 122 Issue 13, p1-7. 7p. - Publication Year :
- 2023
-
Abstract
- Low-cost, stable, and easy-to-fabricate resistive switching memory (RSM) devices are highly desirable for next-generation nonvolatile memories. Spinel-structured CuFe2O4 (CFO), composed of earth-abundant, environmentally friendly elements, is a multifunctional material mainly featuring super-paramagnetism. This work explores the potential of spin-coated CFO thin films as an active material in RSM. A simple fluorine-doped tin oxide (FTO)/CFO/Ag device shows a bipolar resistive switching behavior with the problems like scattered SET and RESET voltages and endurance deterioration. Adding a TiO2 layer in the conventional device, we overcame the above limitations and achieved additional advantages of multilevel switching and improved temperature stability. The solution-processed FTO/TiO2/CFO/Ag bilayer device shows stable endurance with a maximum ON/OFF ratio of 100 with the ability to have multiple high resistance states and exhibits excellent temperature stability up to 250 °C. Our results further enhance the multifunctionality of CFO with the potential of being low-cost multilevel RSM. [ABSTRACT FROM AUTHOR]
- Subjects :
- *NONVOLATILE memory
*TIN oxides
*THIN films
*CHIEF financial officers
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 122
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 162857431
- Full Text :
- https://doi.org/10.1063/5.0146126