Cite
Theoretical adjustment of metalorganic chemical vapor deposition process parameters for high-quality gallium nitride epitaxial films.
MLA
Wang, Dong, et al. “Theoretical Adjustment of Metalorganic Chemical Vapor Deposition Process Parameters for High-Quality Gallium Nitride Epitaxial Films.” Physics of Fluids, vol. 35, no. 3, Mar. 2023, pp. 1–13. EBSCOhost, https://doi.org/10.1063/5.0141060.
APA
Wang, D., Lao, J., Xiao, W., Qu, H., Wang, J., Wang, G., & Li, J. (2023). Theoretical adjustment of metalorganic chemical vapor deposition process parameters for high-quality gallium nitride epitaxial films. Physics of Fluids, 35(3), 1–13. https://doi.org/10.1063/5.0141060
Chicago
Wang, Dong, Junyan Lao, Wenjia Xiao, Hengxu Qu, Jie Wang, Gang Wang, and Jian Li. 2023. “Theoretical Adjustment of Metalorganic Chemical Vapor Deposition Process Parameters for High-Quality Gallium Nitride Epitaxial Films.” Physics of Fluids 35 (3): 1–13. doi:10.1063/5.0141060.