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CuSCN/Si heterojunction near-infrared photodetector based on micro/nano light-trapping structure.
- Source :
-
Nanotechnology . 6/4/2023, Vol. 34 Issue 23, p1-13. 13p. - Publication Year :
- 2023
-
Abstract
- In this paper, high-performance CuSCN/Si heterojunction near-infrared photodetectors were successfully prepared using nanoscale light-trapping optical structures. Various light-trapping structures of ortho-pyramids, inverted pyramids and silicon nanowires were prepared on silicon substrates. Then, CuSCN films were spin-coated on silicon substrates with high crystalline properties for the assembly of CuSCN/Si photodetectors. Their reflectance spectra and interfacial passivation properties were characterized, demonstrating their superiority of light-trapping structures in high light response. Under the irradiation of 980 nm near-infrared light, a maximum responsivity of 2.88 A W−1 at −4 V bias and a specific detectivity of 5.427 × 1010 Jones were obtained in the CuSCN/Si heterojunction photodetectors prepared on planner silicon due to 3.6 eV band gap of CuSCN. The substrates of the light-trapping structure were then applied to the CuSCN/Si heterojunction photodetectors. A maximum responsivity of 10.16 A W−1 and a maximum specific detectivity of 1.001 × 1011 Jones were achieved under the 980 nm near-infrared light irradiation and −4 V bias, demonstrating the advanced performance of CuSCN/Si heterojunction photodetectors with micro-nano light-trapping substrates in the field of near-infrared photodetection compared to other silicon-based photodetectors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 34
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 162901933
- Full Text :
- https://doi.org/10.1088/1361-6528/acc039