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Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs.
- Source :
-
Applied Physics Letters . 4/10/2023, Vol. 122 Issue 15, p1-5. 5p. - Publication Year :
- 2023
-
Abstract
- The electroluminescence of UVB light-emitting diodes emitting at 310 nm before and after 1000 h of operation is studied in the temperature range from 20 to 340 K. Before operation, the external quantum efficiency (EQE) at 10 mA gradually increases with decreasing temperature from 0.8% at 340 K to 1.8% at 150 K and then levels off. This trend is attributed to a reduction of non-radiative recombination and finally the domination of radiative recombination at low temperatures. After 1000 h of operation, the EQE has dropped to 0.45% at 340 K with a maximum EQE of 1.4% at 80 K, followed by a drop for temperatures below 80 K. These findings suggest a stress-induced reduction of both the radiative recombination efficiency and the carrier injection efficiency. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 122
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 163113555
- Full Text :
- https://doi.org/10.1063/5.0139200