Back to Search
Start Over
Hydrogen-assisted growth of one-dimensional tellurium nanoribbons with unprecedented high mobility.
- Source :
-
Materials Today . Mar2023, Vol. 63, p50-58. 9p. - Publication Year :
- 2023
-
Abstract
- [Display omitted] High-mobility van der Waals ambipolar semiconductors are promising in logic and reconfigurable circuits, integrated optoelectronic circuits, due to the excellent gate-controlled capability and effectively tunability of major charge carriers by electrostatic field. Controllable growth of high-quality ambipolar semiconductors with high mobility and stability is highly glamorous and indispensable for further research. Here, we demonstrate a straightforward space-confined chemical vapor deposition (CVD) method to synthesize high-quality quasi-one-dimensional (1D) tellurium (Te) nanoribbons (NRs). By introducing H 2 into the gas flow, endothermic compound H 2 Te was generated from the reaction of liquid Te with H 2 , and consequently decomposed into elemental Te at low temperature. Further, the Te NRs have been utilized for in-situ fabrication of field-effect transistors (FETs) without transferring process. Ambipolar features are achieved using nickel (Ni) as an ohmic contact. More importantly, the mobilities of the Te NR transistor for hole/electron are as high as 1755/28.6 cm2V−1s−1 and 4024/278 cm2V−1s−1 at room temperature and under a temperature below 20 K, respectively. Our findings confirm the novel strategy for synthesizing 1D elemental semiconductors and their applications with ambipolar behaviors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13697021
- Volume :
- 63
- Database :
- Academic Search Index
- Journal :
- Materials Today
- Publication Type :
- Academic Journal
- Accession number :
- 163186527
- Full Text :
- https://doi.org/10.1016/j.mattod.2023.02.003